Aluminium Nitride Ceramics AlN
Aluminium Nitride is frequently selected for its thermal conductivity and its resistance to attack by fluorine plasmas.
Applications
- Chamber parts for Semiconductor Process Equipment
- Heat Radiation Substrate
Properties
| ALN99 | ALN94 | |||
| General Properties | Characteristics | High purity | HighThermal Conductivity | |
| Main Component Purity(wt%) | 99 | 94 | ||
| Color | Light gray | Light gray | ||
| Density(g/cm3) | 3.24 | 3.31 | ||
| Water Absorption(%) | 0 | 0 | ||
| Mechanical Properties | Bending Strength(MPa) | 295 | 345 | |
| Young's Modulus(GPa) | 320 | 320 | ||
| Vickers Hardness(GPa) | 11 | 11 | ||
| Thermal Properties | Max.Operating Temperature (°C) | 1000 | 1000 | |
| Coefficient of Thermal Expansion (1/°C×10-6) | RT~500°C | 4.4 | 4.4 | |
| RT~800°C | 5.1 | 5.1 | ||
| Coefficient of Thermal Conductivity (W/m×K) | 80 | 150 | ||
| Thermal Shock Resistance ΔT (°C) | 300 | 400 | ||
| Electrical Properties | Volume Resistivity | 25°C | 1014 | 1014 |
| 300°C | 108 | 1010 | ||
| 500°C | 107 | 107 | ||
| 800°C | 105 | 105 | ||
| Dielectric Constant | 10GHz | 8.5 | 8.5 | |
| Dielectric Loss (×10-4) | 30 | 30 | ||
| Q Factor (×104) | 0.03 | 0.03 | ||
| Dielectric Breakdown Voltage (KV/mm) | - | - | ||