Power Semiconductor DCB & AMB Substrates

Temperature Controlling Semiconductors (Peltier Elements)

Ferrotec offers Power Semiconductor Subtrates for heat dissipation and insulation that using manufacturing technology from our thermoelectric module production. We offer options for Active Metal Brazing (AMB) and Direct Copper Bonding (DCB) substrates.

Thermoelectric Module Manufacturing Technology Enables Solutions for Heat Dissipation and Insulation Substrates

Generally, organic and metal substrates are used in the circuit boards of low-power home appliances and computers. However, higher power applications need substrates that with better thermal properties to operate efficiently.

Ceramic substrate materials, like alumina, aluminum nitride and silicon nitride substrates, are used in the heat radiation insulated boards of power modules that handle high power. In particular, silicon nitride substrates can be particularly useful in the power modules of inverters and converters in HEVs and EVs.

Direct Copper Bonding (DCB)

Al₂O₃ DCB (ZTA)alumina

Al₂O₃ DCB (Ag)alumina

Al₂O₃ DCB (Au)alumina

Al₂O₃ DCBalumina

DCB Product Characteristics

Active Metal Brazing (AMB)

SiN AMB (Au) Silicon nitride

SiN AMB (Cu) Silicon nitride

SiN AMB (Ni) Silicon nitride

SiN AMB Silicon nitride

AMB Product Characteristics

DCB Product Characteristics

DCB board performance Item Numerical value Unit
Maximum dimension 138*190 mm
Maximum effective area 127*178 mm
Pitch between resists In line with our design rules mm
Resist width +0.3/-0.2 mm
Peel strength >5 N/mm
Solderability >95% %
Shipping form Individual delivery/MC delivery
Surface condition Copper pattern/resist/Ni plating/
Ni gold plating/Silver plating
µm
Material
fee
Alumina ZTA Component 90% Al / ZrO₂ %
Thickness 0.32, 0.25 mm
Density 3.95 g/cm³
Thermal conductivity 27 W/mk
Pile strength 600 W/mk
Relative permittivity 10.5 1 MHz
Dielectric loss 0.0003 1 MHz
Dielectric strength 20 kV/mm
Volume resistance 1*1014 Ωcm
Alumina Component 96% Al₂O₃ %
Thickness 1.00, 0.89, 0.76, 0.63, 0.5, 0.38, 0.32, 0.25 mm
Density 3.73 g/cm³
Thermal conductivity Twenty four W/mk
Pile strength 350 ~ 450 Mpa
Relative permittivity 9.8 1 MHz
Dielectric loss 0.0003 1 MHz
Dielectric strength 20 kV/mm
Volume resistance 1*1014 Ωcm
Copper Material Oxygen free copper %
Purity 99.99 %
Hardness 90 ~ 110 HV
Conductivity 58.6 MS/m
Thickness 0.40, 0.30, 0.25, 0.20, 0.127 mm

AMB Product Characteristics

AMB substrate performance Item Numerical value Unit
Maximum dimension 138*190 mm
Maximum effective area 127*178 mm
Pitch between resists In line with our design rules mm
Resist width +0.3/-0.2 mm
Peel strength >10 N/mm
Solderability >95% %
Shipping form Individual delivery/MC delivery
Surface condition Copper pattern/resist/Ni plating/
Ni gold plating/Silver plating
µm
Material
fee
Silicon nitride Component 96% SiN %
Thickness 0.32, 0.25 mm
Density 3.22 g/cm³
Thermal conductivity 90 W/mk
Pile strength 700 Mpa
Relative permittivity 8 1 MHz
Dielectric loss 0.001 1 MHz
Dielectric strength 20 kV/mm
Volume resistance 1*1014 Ωcm
Aluminum nitride Component 96% AlN %
Thickness 1.0, 0.63, 0.38, 0.25 mm
Density 3.3 g/cm³
Thermal conductivity 170 W/mk
Pile strength 350 Mpa
Relative permittivity 9 1 MHz
Dielectric loss 0.0005 1 MHz
Dielectric strength 20 kV/mm
Volume resistance 1*1014 Ωcm
Copper Material Oxygen free copper
Purity 99.99 %
Hardness 60 ~ 110 HV
Conductivity 58.6 MS/m
Thickness 0.8, 0.5, 0.4, 0.3, 0.25, 0.2 mm

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